测量了AMR元件的磁电阻效应。
在测量温度范围内，没有观测到磁电阻效应。
No magnetoresistance effect was observed in the temperature range of measurement.
巨磁电阻效应的发现开拓了磁电子学的新领域。
A new research field of magnetoelectronics has been developed since the discovery of giant magnetoresistance.
巨磁电阻效应的发现者获得2007年诺贝尔物理学奖。
The discoverers of GMR have won the 2007 physics Nobel Prize.
磁电阻效应是指材料的电阻随外加磁场变化而变化的现象。
Changing of material resistance with applied magnetic field intensity is called Giant magnetoresistance (GMR).
研究了块体样品的相结构，导电性质、磁学性质以及磁电阻效应。
The structure, electrical and magnetic properties as well as colossal magnetoresistance(MR) of the bulk samples were researched in detail.
庞磁电阻效应总是出现在居里温度附近，偏离居里温度都会很快降低。
The colossal magneto-resistance appears at temperature close to the Curie temperature, and resistance will reduce with the temperature being increased or decreased quickly.
由于其具有庞磁电阻效应，使得其在信息技术领域有着广阔的应用前景。
Since the LSMO films exhibit the colossal magnetoresistance effect, they have wide potential applications in the field of information technique.
由于在信息存储技术中的应用潜力，人们对巨磁电阻效应发生了浓厚的兴趣。
Because of its application potential of GMR in information storage technology, it's very useful for us to develop GMR researches.
综述了金属多层膜巨磁电阻效应的研究现状、理论解释，并展望了其研究方向。
Current study and theoretical explanation of GMR of metallic multilayer were reviewed, and its study trends were prospected.
非均匀颗粒系统呈现的磁电阻效应与电子在两相颗粒界面的自旋相关散射有关。
The room magnetoresistance effect is largely enhanced in such an inhomogeneous granular system due to the spin dependent scattering of electrons at the interface of the two phases.
本文介绍了各种磁性材料的巨磁电阻效应及其传感器的原理、结构、特性和应用。
This paper introduces an effect of gain magnetic resistance for multilayer magnetic films , as well as the principle, structure, characteristic and application of the GMR sensors.
系统地研究了薄膜的微结构、磁性、隧道磁电阻效应（TMR）和巨霍耳效应（GHE）。
The microstructure and tunneling magneto-resistance(TMR) as well as the giant Hall effect(GHE) were systematically investigated.
由于巨磁电阻效应在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。
Materials with giant magnetoresistance effect have been extensively studied because of their potential application in magnetic recording and sensors.
巨磁电阻效应位居当前凝聚态物理研究热点中的首位，因此得到了国内外研究人员的广泛重视。
The Giant Magneto-Pesistance (GMR) effect is the primary research direction of condensed matter physics, thus it attracts more and more attention of researchers.
钙钛矿结构的锰氧化物因为庞磁电阻效应而引起了广泛关注，成为强关联电子体系研究的热点。
The study of the manganese oxides, widely known as manganites, which exhibit the colossal magnetoresistance is among the main areas of research within the area of strongly correlated electrons.
我们发现，这类体系在输运性质上有着特别的特征，复合体系在低场下展示了特殊的的磁电阻效应。
Especially, we have observed the special low-field magnetoresistance and anisotropic magnetoresistance effect of the Cu-coated system.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
磁电阻的本征效应和传导电子在界面处的自旋相关散射作用是产生室温下增强磁电阻效应的主要原因。
The enhancement of MR effect at room temperature was mainly related to the coexistence of intrinsic MR properties and the spin dependent scattering of conduction electrons at the interfaces.
随着巨磁电阻效应(GMR)研究的广泛开展，方便、快速的磁电阻测试已成为研究GMR效应的基础。
With the increasing research on giant magnetoresistance (GMR), convenient and fast testing system has become the basis of research on GMR.
本发明涉及多层膜的蚀刻方法，特别是各向异性磁电阻效应(amr)传感器制造中所使用的多层膜的蚀刻方法。
The present invention relates to combined dry and wet etching process for multilayer film, especially in anisotropic magnetic resistance effect (AMR) sensor manufacture.
在半金属氧化物颗粒体系中，颗粒边界的作用至关重要，外禀磁电阻效应与穿越颗粒边界的自旋输运过程密切相关。
In half-metallic granular systems, the extrinsic magnetoresistance effect is closely related to the spin-dependent transport processes across grain boundaries (GBs).
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
概括介绍了金属软磁合金多层薄膜巨磁电阻效应和巨磁阻抗效应的研究和应用，对多层薄膜的制备方法和表征手段作了介绍。
The particular magnetic effects, which are the giant magnetoresistance effect and the magnetic relaxation effect, of the granular films at low temperature have been studied.
在以往的电子输运过程中，人们仅需要考虑电子作为电荷的载体，但在巨磁电阻效应中，电子不仅是电荷的载体，而且具有自旋。
We only need consider electron as carrier of electric charge in former electron transporting process, but in GMR effect, electron not only is the carrier of electric charge, but also has spin.
正如我们所知道的，自从在钙钛矿锰氧化物中发现巨磁电阻效应以来，有关它的研究已经成为当前强关联电子体系的一个研究热点。
As we know, the studies of perovskite manganite oxides have attracted much renewed attention in strongly correlated electron system since the discovery of colossal magnetoresistance (CMR) effect.
巨磁电阻(GMR)效应使这样一个驱动器的直径不到一英寸，检测在便携式电子设备中存储数据的微小的磁场。
The giant magnetoresistance (GMR) effect allows drives like this one, less than an inch in diameter, to detect the tiny magnetic fields that store data in portable electronic devices.
研究MTJ样品的隧道结磁电阻(TMR)效应。
Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.
研究MTJ样品的隧道结磁电阻(TMR)效应。
Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.
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