该传感器将集成大量霍尔元件技术和进行信号调理的仪表电路整合在一起，从而使与硅霍尔元件特性相关的温度漂移降到最小。
The sensor combines integrated bulk hall cell technology and instrumentation circuitry to minimize temperature related drifts associated with silicon hall cell characteristics.
该传感器将集成大量霍尔元件技术和进行信号调理的仪表电路整合在一起，从而使与硅霍尔元件特性相关的温度漂移降到最小。
The sensor combines integrated bulk hall cell technology and instrumentation circuitry to minimize temperature related drifts associated with silicon hall cell characteristics.
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