本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。

The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.

youdao

本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。

The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.

youdao