预置计数器。高性能硅栅cmos。
八路三态反相总线收发器。高性能硅栅cmos。
Octal 3-state inverting bus transceiver. High-performance silicon-gate CMOS.
八路三态同相总线收发器。高性能硅栅cmos。
Octal 3-state noninverting bus transceiver. High-performance silicon-gate CMOS.
很多代以来，EOT缩小的一个大问题就是多晶硅栅的耗尽电容问题。
For many generations, the most significant part of the EOT scaling problem was the depletion capacitance of polysilicon gates.
关键工艺模块之一是新的LOCOS开发与硅栅光刻工艺改善的结合。
One of the most important module improvement is the combination of new LOCOS process development with poly gate lithography process.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
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