现代先进的外延技术使应变层锗硅材料的应用成为可能。
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。
With deepened research of porous Si and the advancing nanometer science, a path towards nanometer light-emitting materials is being opened up.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
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