硅基发光材料是光电子集成的基础材料。
Si-based light-emitting materials are fundamental in optoelectronic integration.
硅基发光材料是未来光电子集成的基础材料。
Silicon based light emitting materials are the elemental materials for the future optoelectronic integration.
硅基发光一直是硅基材料和器件研究的重要课题。
Luminescence based on silicon has always been the key subject of the study of Si-based materials and devices.
这种新型的硅基发光管结构在下一代集成电路中作为芯片之间或芯片内部的光互连具有非常广阔的应用前景。
The new type silicon-based luminous tube structure has a widely application prospect as light connection between chips or chips inner in next generation integrated circuit.
即使是在目前的早期阶段，他认为硅基的氮化镓发光二极管就已经具有商业意义了。
Yet even at this early stage he thinks gallium nitride-on silicon LEDs would make commercial sense.
与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。
With deepened research of porous Si and the advancing nanometer science, a path towards nanometer light-emitting materials is being opened up.
本发明提供了一种可用于提高硅基太阳能电池能量转换效率的上转换发光材料及其制备方法。
The invention provides an up-conversion luminescent material used for improving the energy conversion efficiency of a silicon-based solar battery and a preparation method thereof.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
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