本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；
The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;
所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；
The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;
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