常用的本质半导体是硅、锗以及砷化镓等的单晶。
Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide.
早期LED的液晶层是砷化镓或者磷化镓做的，所以发出红光。
The crystal layer on early LEDs was gallium arsenide or gallium phosphide, which lent that reddish color.
根据公司的消息，真空管将不会被砷化镓晶体管取代。
According to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by GaAs transistors because they a much lower breakdown voltage.
理想用于纠正从中砷化镓放大器的使用温度波动变化。
Ideal for use for correcting gain shift from temperature fluctuations of GaAs amplifiers.
用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
这样就可以避免张力对于砷化镓元件损伤，但整个系统却表现出一种柔性。
This protects the rigid gallium arsenide components from strain, but the system as a whole is flexible and stretchable.
黄河源彩色设备均采用砷化镓磷化镓磷化物黄色发光二极管。
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。
In this paper, the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.
每块板上包含的把可以太阳光浓缩400倍的小晶体，主要成分是砷化镓光电池。
Each panel contains small lenses that concentrate sunlight by 400 times onto strips containing gallium arsenide photovoltaic cells.
高效率红源彩色设备均采用砷化镓磷化镓磷化物的橙色发光二极管。
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
介绍了一个在SUN工作站上自主开发的砷化镓集成电路CAD系统。
GaAs IC CAD system which developed on SUN workstation is introduced in this paper.
评述砷化镓中硅SIMS定量分析的进展，讨论了相对灵敏度因子法。
The development on quantitative analysis of si in GaAs by SIMS is reviewed critically. Therelative sensitivity factor (RSF) method is discussed in detail.
根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。
A new kind of generator rotor temperature measuring system is designed based on optical absorption behavior of GaAs semiconductor.
根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。
A new kind of generator rotator temperature measuring system is designed based on optic absorption theory of GaAs semiconductor.
光电反馈线路采用普通的砷化镓光电导开关，具有结构简单、性能可靠的优点。
The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.
本文讨论了砷化镓单片微波集成电路的优缺点、工艺特点、应用领域和今后展望。
The advantages and disadvantages, technological features, application fields and prospect of GaAs monolithic microwave integrated circuits are discussed in this paper.
本文报道了获取半导体砷化镓“晶须”的激光方法，并简述了新材料的应用前景。
In this paper a laser way for obtaining "whisker" of semiconductor GaAs is presented and the prospect of using new material is simply described.
我们所讨论的光源是一个纳米级的激光，它通过一个砷化镓芯片发射光线，如下图。
The light source in question is a nanoscale laser, which beams light through a gallium arsenide chip, as shown below.
使用更高效的半导体，比如砷化镓，也是一种选择，虽然除了NASA没人用的起。
Using more efficient semiconductors, such as gallium arsenide, which is currently too expensive for anyone except NASA, is another.
砷化镓晶片生产过程中，产生大量废水，其中主要污染物是悬浮状态的砷化镓微粒。
A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers, and the main contamination was gallium arsenide particles in suspension.
输出耦合镜作为激光光路系统的核心部件，通常由硒化锌、锗、砷化镓等基材制成。
Being a core part of laser beam system, the output coupling mirror are often made of ZnSe, Ge, GaAs as base materials.
在室温去除水份影响的氮气环境中，获得了低温生长的砷化镓在该波段的特征吸收谱。
Under the room temperature and Nitrogen environment (eliminate the influence of water vapor absorption), we get the characteristic absorption spectrum of GaAs within the band of frequency.
目前射频芯片和高速光纤通信芯片绝大多数都是采用高速双极性硅工艺和砷化镓工艺。
At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
构造则是技巧和材料的选择,的结合，拿这个电脑为例，如果我将硅取出，替换成砷化镓，其他东西不变。
Construction is a combination of workmanship and choice of materials. Take this computer, if I pull the silicon out, I replace it with gallium arsenide, leave everything else the same.
正向采用双模块设计，第一级采用低噪音放大模块，第二级采用功率倍增或砷化镓功率倍增模。
Uses double-hybrid design forward: first, low-noise amplifier module, then power double amplifier module or GaAs power double amplifier module, while using independent module return.
模拟衰减器在射频和微波网络中有广泛的应用，可用砷化镓mmics和PIN二极管网络实现。
Simulant attenuator has been widely applied in microwave and radio networks with MMICS and PIN diode networks.
每块板上包含的把可以太阳光浓缩400倍的小晶体，主要成分是砷化镓光电池。并且跟随太阳轨迹双轴工作。
Each panel contains small lenses that concentrate sunlight by 400 times onto strips containing gallium arsenide photovoltaic cells. Dual-axis trackers follow the sun's trajectory.
每块板上包含的把可以太阳光浓缩400倍的小晶体，主要成分是砷化镓光电池。并且跟随太阳轨迹双轴工作。
Each panel contains small lenses that concentrate sunlight by 400 times onto strips containing gallium arsenide photovoltaic cells. Dual-axis trackers follow the sun's trajectory.
应用推荐