模拟的瞬态响应曲线与实验曲线较为一致，模拟误差在10%以内。
The numerical curve exhibits very good agreement with experimental results, and simulation error is less than 10%.
在将表面产生速度看作常数的条件下，本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。
In this paper an analytical expression of the ct transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant.
在将表面产生速度看作常数的条件下，本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。
In this paper an analytical expression of the ct transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant.
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