最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
文中应用模拟电路、微机控制技术实现了对控温精度要求很高的直拉单晶硅炉温度控制系统的设计。
The design of the single crystal furnace temperature control system is realized by analog electronic, microcomputer unit control skills.
直拉法生长单晶硅是目前最常用最成熟的工业化方法。
Growth of Czochralski silicon crystals is the most common and perfect one in industry.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
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