在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件，室温下可以达到较高的电流峰谷比5。
The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.
在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件，室温下可以达到较高的电流峰谷比5。
The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.
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