仪器用8031单片机作智能部件，对双电层电容充电电流引起的测量误差作了修正。
Theinstrument is controlled by microprocessor 8031. It has been made correction for error of determinaion resulting from charge current for couple electrolayer capacitor.
在低耦合系数条件下 ，通过基于初级漏感的E类功率放大器和次级漏感的补偿方法 ，提高电容充电电流和传输效率。
In order to improve both charge current and transfer efficiency via a lower coupling coefficient inductive link, class E power amplifier based on primary leakage inductance and compensat.
这是参考输出。它提供了电容CT充电电流通过电阻RT。
Vref:This is the reference output. It provides charging current for capacitor CT through resistor RT.
它限制每个电容器的充电电流，并在电容器发生短路时保护继电器。
It limits the charging current of each capacitor and also protects the relays in case a capacitor becomes short-circuited.
该二极管象一个可变的电阻。当电容器的充电电流很大时，其阻值很低；而电流随时间变小时，其阻值增大。
The diode ACTS like a variable resistance, low when the charging current to the capacitor is high, then increasing in value as the current decreases with time.
R3限制电容器C3的充电电流，由此在电容器C3上存在受限的dV／dt，并且因此在连接到IGBT发射极的电容器C4上也存在受限的dV／dt。
R3 limits the charging current of capacitor C3, so that a limited dV/dt exists on capacitor C3 and by consequence also on capacitor C4 which is connected to the IGBT-emitter.
在该电容性元件被充电到该预给定的充电电压期间，该充电电流阈值被改变。
The charging current threshold is modified while the capacitive element is charged to the predetermined charging voltage.
因此，电容器C4(穿过电阻器R2和IGBTQ2)的充电电流也受到限制，由此不会有部件被击穿。
Hence, the charging current of capacitor C4 (running through resistor R2 and IGBT Q2) is also limited so that no components can break down.
因此，电容器C4(穿过电阻器R2和IGBTQ2)的充电电流也受到限制，由此不会有部件被击穿。
Hence, the charging current of capacitor C4 (running through resistor R2 and IGBT Q2) is also limited so that no components can break down.
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