而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
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