所述至少一个非半导体单层被定位于相对于所述沟道和所述栅极电介质之间的界面大约4- 100个单层的深度处。

The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.

youdao

所述至少一个非半导体单层被定位于相对于所述沟道和所述栅极电介质之间的界面大约4- 100个单层的深度处。

The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.

youdao