研究结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
The results show that the limiting factor in thin gate oxides breakdown depends on the balance between the amount of injected hot electrons and holes.
结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
The results show that the limiting factor for thin gate oxides depends on the balance between the amounts of injected hot electrons and holes.
本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。
This Paper studies interface effect of avalanche hot electron in MOS structures.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
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