本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。
Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made.
本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。
Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made.
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