本文提出的中子掺杂硅单晶旋转辐照模型，给出了热中子通量在硅断面上的分布．平均值和不均匀度。
The rotating irradiation model for ND silicon presented in this paper gives distribution, mean value and heterogeneity of the thermal flux on the cross section of silicon.
本文提出的中子掺杂硅单晶旋转辐照模型，给出了热中子通量在硅断面上的分布．平均值和不均匀度。
The rotating irradiation model for ND silicon presented in this paper gives distribution, mean value and heterogeneity of the thermal flux on the cross section of silicon.
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