这些深能级的浓度约为浅能级浓度的百分之几。
Their concentrations are only a few percent of shallow levels.
它可以用来探测材料中的缺陷及浅能级杂质，显示其分布。
It can be used for investigation to detect defects and shallow impurities, and to show their distributions in semiconductor materials.
在简单能带结构情况下，我们讨论了电离能与原子性质的关系，及由浅能级向深能级的转化。
In the case of simple band structure, the influence of atomic character on the ionization energy, and the relation between the shallow and the deep levels were discussed.
结果发现：1。电子相互作用使能隙中出现了一个新的电子束缚态，它是靠近价带的浅能级；
The results show: 1. There emerges a new bound state in the gap caused by thee-e interation, that is a shallow discrete level near the top of the valence band.
结果发现：1。电子相互作用使能隙中出现了一个新的电子束缚态，它是靠近价带的浅能级；
The results show: 1. There emerges a new bound state in the gap caused by thee-e interation, that is a shallow discrete level near the top of the valence band.
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