电流源在模拟晶体管特性时极其有用。
Current sources are most useful in modeling the behavior of transistors.
在模拟世界里，这是通过以某种方式连接的晶体管来做到的。
This is done in the analog realm by wiring a transistor in a certain way.
模拟试验数据分析结果表明，该试验方法可以有效地提高晶体管稳态工作寿命试验方法的可信度。
Analyzing result of simulated experiment data shows that the test method can increase availably the accuracy of the transistor steady-state operation life test method.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。
The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region.
对雷达产生浪涌信号的一个典型电路进行仿真，得出模拟电路产生浪涌的一个重要原因是晶体管的瞬间导通电流过大。
Based on the simulation research of the typical radar analog circuit, it is shown that the main reason of the emerging surge signal is the high transient current conducted in the transistor.
因此，电流镜(100)的每个晶体管限定数字模拟转换电路的步，相邻步之间的比率实质上是常数。
Thus, each transistor of the current mirror (100) defines a step of the digital to analog conversion circuit, and the ratio between adjacent steps is substantially constant.
复合晶体管，复合晶体管对，电流平方器和CMOS模拟乘法器。
Composite transistor, composite-transistor pair, current squarer, and CMOS analog multiplier.
本文提出一种只使用两只晶体管和少量RC元件的低耗模拟电感。
This paper presents a simple low loss simulated inductor using only two transistors and a few RC passive elements.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
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