栅极绝缘层可以是高k的材料。
每个晶体管可以由形成在半导体上的栅极绝缘层形成。
Each transistor may be formed from a gate insulating layer formed on a semiconductor.
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结晶硅层。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
另外，形成一栅极材料层于绝缘层上。
Furthermore, a grid material layer is formed on the insulation layer.
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
本发明还提供上述场发射装置的制造方法，包括采用蒸镀法在该栅极表面形成该绝缘层。
The present invention also provides the manufacture process of the field emitting device, and the manufacture process includes evaporation step to form the insulating layer on the surface of the grid.
半导体装置包括从基底突出的隔离层、分隔件、隧道绝缘层、浮置栅极、介电层图案和控制栅极。
The semiconductor device includes a isolated layer protruding from a substrate, a separator, a tunnel insulation layer, a floating grid, a dielectric layer pattern and a control grid.
本发明提供的场发射装置包括阴极和栅极。该阴极上设有至少一个电子发射端。该栅极与该电子发射端临近的表面上设有绝缘层。
The field emitting device of the present invention includes cathode with at least one electron emitting end and grid with insulating layer in the surface near the electron emitting end.
本发明提供的场发射装置包括阴极和栅极。该阴极上设有至少一个电子发射端。该栅极与该电子发射端临近的表面上设有绝缘层。
The field emitting device of the present invention includes cathode with at least one electron emitting end and grid with insulating layer in the surface near the electron emitting end.
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