当放置在横向器件的漏极或垂直器件的集电极中时，多晶填充的沟槽有效地放大了漏极或集电极区域，从而降低了导通电阻。
When placed in the drain of a lateral device or in the collector of a vertical device, the poly-filled trench effectively enlarges the drain or collector region, thereby lowering the ON-resistance.
当放置在横向器件的漏极或垂直器件的集电极中时，多晶填充的沟槽有效地放大了漏极或集电极区域，从而降低了导通电阻。
When placed in the drain of a lateral device or in the collector of a vertical device, the poly-filled trench effectively enlarges the drain or collector region, thereby lowering the ON-resistance.
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