垂重多重结半导体器件（VMJ）有良好的近红外光电特性。
The vertical multijunction semiconductor device (VMJ) has a good infrared photoelectric characteristic.
本文首次利用时域有限差分(FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性。
A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.
本文首次利用时域有限差分(FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性。
A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.
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