目前LED同硅晶片的制作设备类似，都是通过在蓝宝石衬底片上沉淀氮化镓层实现。
At present these LEDs are made in machines similar to those used to make silicon chips, by depositing layers of gallium nitride on sapphire-based wafers.
采用双压电晶片振子为移动机构的驱动源，提出可以实现二维平面移动的新型压电驱动机构。
A new type of the PZT driving device to realize the planar movement by using the bimorph oscillator as the driver was presented.
经过了解晶片的预习处理，我们实现了这种清洗设备背面清洗效果的评价。
Having the understanding of the wafer preparation, we carried out an evaluation of the tool's backside cleaning.
在1998年底推出了全新的纳米金刚石薄膜晶片，并实现了批量工业化生产。
At the end of 1998 introduced a new nano-diamond film chips, and realize the bulk industrial production.
通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
介绍了在化学机械抛光过程中，可以通过抛光头与抛光台运动速度关系优化配置，降低晶片表面不均匀度，从而更好地实现晶片局部和全局平坦化。
This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
本发明的切片方法，可以实现更高的光伏晶片的面积利用效率。
The slicing method of the invention is capable of implementing high area utilization efficiency of the photovoltaic wafer.
采用双晶片探头和电子天平对PZT微力传感器进行静态力标定，进而利用双晶片探头和电荷放大器对PZT微力传感器进行准静态标定，微小信号检测通过锁相放大器来实现。
PZT micro -force sensors were calibrated by bimorph and electronic balance in static state and by bimorph and charge amplifier in dynamic state, small signal was tested by amplifier.
采用双晶片探头和电子天平对PZT微力传感器进行静态力标定，进而利用双晶片探头和电荷放大器对PZT微力传感器进行准静态标定，微小信号检测通过锁相放大器来实现。
PZT micro -force sensors were calibrated by bimorph and electronic balance in static state and by bimorph and charge amplifier in dynamic state, small signal was tested by amplifier.
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