英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
该芯片的判决电路采用SCFL(源级耦合晶体管逻辑)的D触发器结构，根据矢量叠加原理设计，采用差动电流放大器构成可调移相器。
The decision circuit of the chip is applied with a DFF using SCFL structure and its tuned phase shifter with differential current amplifiers according to the principle of vector addition.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
两个功率放大器的输出级均采用PMOS和NMOS晶体管特殊设计而成。
Two power amplifier output stage using PMOS and NMOS transistors by the special design.
其设计的优劣直接影响着FPGA实现具体设计的性能及FPGA芯片可以承载的最大系统级晶体管数。
The quality of the block's design directly effects the performance of the FPGA and the maximum system gates that FPGA included.
其设计的优劣直接影响着FPGA实现具体设计的性能及FPGA芯片可以承载的最大系统级晶体管数。
The quality of the block's design directly effects the performance of the FPGA and the maximum system gates that FPGA included.
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