在直拉法晶体生长过程中，主要是通过调节提拉速度和加热器温度跟踪目标曲线来实现晶体等径生长的。
In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.
在直拉法晶体生长过程中，主要是通过调节提拉速度和加热器温度跟踪目标曲线来实现晶体等径生长的。
In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.
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