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    Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).

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    Q1 and Q2 are common power Darlington transistors.

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    In this circuits microwave crystal detectors is adopted for the sampling gate.

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  • 本文普通极型IC工艺用干磁器件制作中,成功地研制了一种新型三维磁敏晶体管在理论实验上分析讨论了其灵敏度、线性度和失调等问题。

    Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.

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  • 本文普通极型IC工艺用干磁器件制作中,成功地研制了一种新型三维磁敏晶体管在理论实验上分析讨论了其灵敏度、线性度和失调等问题。

    Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.

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