它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
普通功率达林顿晶体管Q1和Q2。
设备采用了普通的漂移晶体管和微波晶体检波器。
In this circuits microwave crystal detectors is adopted for the sampling gate.
本文将普通的双极型IC工艺用干磁敏器件的制作中,成功地研制了一种新型三维磁敏晶体管,并在理论和实验上分析讨论了其灵敏度、线性度和失调等问题。
Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.
本文将普通的双极型IC工艺用干磁敏器件的制作中,成功地研制了一种新型三维磁敏晶体管,并在理论和实验上分析讨论了其灵敏度、线性度和失调等问题。
Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.
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