由它们的态密度图可以看出，这些团簇均展现半导体性质。
From the figures of their density of states (DOS), we can find that these clusters all present semiconductor-like properties.
通过对这些合金化元素价电子态密度图的分析，得到了比较合理的解释。
From above results, a reasonable explanation has been given on the analysis basis of the states density of valence electrons of these 3d TM elements in NiAl.
并用正态核加权和密度函数拟合法解决了非正态图象模板匹配的优化问题。
By means of the density function fitting method of weighted sum of normal kernels the optimizing problem of template matching for non-normal distribution image is solved.
并用正态核加权和密度函数拟合法解决了非正态图象模板匹配的优化问题。
By means of the density function fitting method of weighted sum of normal kernels the optimizing problem of template matching for non-normal distribution image is solved.
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