采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
另外，薄膜硅技术也被开发出来，将非晶硅或者微晶硅薄膜放到玻璃那样的平的大面积衬底上。
Besides, thin-film silicon technologies have also been developed to place a thin film of amorphous or microcrystalline silicon onto flat large-area substrates such as glass.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用VHF-PECVD技术制备了不同衬底温度的微晶硅薄膜样品。
Series of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
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