研究结果表明：用射频等离子体增强化学气相沉积法，可以在PET上沉积厚度为纳米至微米级的非晶碳氢膜。
The results show: the amorphous hydrogenated carbon film can be fabricated on PET surface by plasma-enhanced chemical vapor deposition.
本文介绍了用射频等离子体化学气相沉积的方法，在硅基底上制备得到具有优异性能的非晶态碳膜。
In this paper, the rf plasma deposited method has been reported. On the silicium substratum, the amorphous carbon film with excellent properties have been made.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
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