射频优化是通过调整WCDMA空中接口参数，提高网络的各方面性能，确保网络资源的有效利用。
RF optimization adjusts some air interface parameters to achieve WCDMA network performance upgrade, efficiently utilize network resource.
该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨。
Hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductors on si.
这个优化使用可用的射频(RF)光谱同时最小化干扰到其他使用。
This optimizes the use of available radio-frequency (rf) spectrum while minimizing interference to other use.
与产品工程师一起设定射频产品的测试顺序，测试设定及测试参数，优化测试设置保证产品测试的准确及高效。
Work with product engineer to set up the RF products' testing sequence, testing Settings and testing parameters, optimize all the testing setup to get better testing accuracy and efficiency.
由于默认情况下，发射器每12秒更新一次，以优化电池寿命和最小化射频流量。
As a default the transmitter updates once every 12 seconds to optimize battery life and minimize RF traffic.
提出一种电容射频热疗中优化求解预期深部有效热区分布逆问题的方法。
An inverse optimization method, applied in hyperthermia to search the ideal heating physical configurations in the expected temperature distribution of heat-field, was proposed.
在考虑输入寄生的前提下，对射频输入端的阻抗匹配和噪声性能进行了优化；
The noise performance and impedance matching are optimized with RF input parasitic capacitance in consideration.
用RFMS-4射频磁控溅射仪制备纳米多层膜技术稳定可靠，在优化工艺条件下能保证薄膜成分和溅射速率的稳定性。
The concentration and deposition rate of the films are controllable with the optimization parameters on the RFMS-4 sputtering apparatus.
与硬件射频工程师协同工作，设计、实现和优化射频驱动软件；
Design, implement and optimize RF driver with HW RF engineer.
采用了电容开关的技术以补偿工艺、温度和电源电压的变化，并对片上电感和射频开关进行优化设计以得到最大的Q值。
Some optimization designs were made with the on-chip inductor and the RF switches to get the maximum Q-value.
这样，低功耗优化就成为无源射频识别标签设计中的一个核心问题。
Thus, it makes low-power optimization a kernel faced in RFID transponder design.
对于接收射频前端电路的参数进行了分析，并且提出了优化、改进的方案和下一步的工作。
After analyzing and studying the circuits test parameters and design parameters, the improving methods and the next works are presented at last.
主要步骤包括：器件的射频等效模型分析、混频电路设计与优化、混频电路的阻抗匹配。
The main process includes following: analysis of device model, design mixing circuit, impedance matching.
主要步骤包括：器件的射频等效模型分析、混频电路设计与优化、混频电路的阻抗匹配。
The main process includes following: analysis of device model, design mixing circuit, impedance matching.
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