导体的电容；电容器。电场的能量和能量密度。
Capacitance of conductor capacitor electric field energy and energy density.
第13周导体的电容；电容器。电场的能量和能量密度。
Week 13 Capacitance of conductor, capacitor, electric field energy and energy density.
第10周静电场中的导体、电容器和导体的电容；静电场中的电介质、有介质时的高斯定理。
Week 10 conductor in static electric field, capacitor and capacity of conductor, dielectric in static electric field, Gauss theorem in dielectric medium.
电容取决于任何两个导体之间尺寸，形状和他们之间的距离。
Capacitance depends on the size, shape and separation between any two conductors.
弱电流测量的各种应用包括电容器的漏电、弱电流半导体、光和离子束测量等。
Low current measurement applications include capacitor leakage, low current semiconductor, light, and ion beam measurements.
用镜象法求解金属球与无限大导体平板系统的电容。
The capacitance of a metal ball and an infinitely big conductor plane system is sought out by the method of electrical images.
半导体放电管是新一代抗浪涌保护器件，极间电容是其应用到高频环境下的一个限制因素。
Semiconductor arrester is a new type of surge protection device, which, however, has a large interelectrode capacitance, thus limiting its application in high frequency systems.
本文通过一个典型实例说明接地将对导体系统的电容产生影响，并从理论上分析了产生这种影响的原因。
The paper illustrates, the ground connection exerts an influence on the capacitance of conductor system by typical example, and analyses the cause theoretically.
运用QSPM矩阵分析，得出“剥离低压、半导体瓷介电容器，开发压敏电阻和新型军用元器件产品”的战略。
Applying QSPM matrix analysis, to get the strategy of "Peel off low voltage and semi-conductor ceramic capacitor, develop new type varistor and new type military components".
传输线电容参数提取过程中需要计算导体上的电量，而在电量计算过程中普遍存在着角点的奇异性问题。
The charge on the conductor needs to be calculated while extracting distributed capacitance parameter of transmission lines, and generally there is the singular problem of reentrant corners.
对于多导体中所需要的单位长度电容和电感矩阵，使用矩量法进行分析。
The per-unit-length capacitance matrix used in multi-conductor transmission line coupling equation can be solved by Moment Method.
提出将电子束作传输线内导体等效，采用陶瓷电容分压器来测量速度比的方法。
The electron beam is equivalent to transmission-line inner conductor. A ceramic capacitance divider is proposed for velocity ratio measurements.
导出了导体系任二导体间的等效电容和导体系的电位系数之间的一个关系式，使用此式可方便地计算导体系任二导体间的等效电容。
An equation between the equivalent capacitance and the electric potential coefficients of the system of conductors is given and the equation makes the calculation of the equivalent capacitance easier.
地电流干扰主要是由于半导体器件开关动作产生的快速上升和下降的开关电压作用在对地电容上产生的位移电流形成的。
The grounding current EMI is caused by charging and discharging of the parasitic capacitances between the circuit and ground during the switching instant devices.
原因是，他表示：电容器技术将能量存储在距离很近的一对导体之间的电场中。
The reason, he says: capacitor technology that stores energy in the electric field between a pair of closely spaced conductors.
本发明提供一半导体元件及制造镶嵌结构中的金属绝缘金属电容的方法。
The invention provides a semiconductor component and a method for manufacturing a metal-insulator-metal capacitor in a Mosaic structure.
利用解析函数的性质，通过反双曲余弦计算出了由共焦点椭圆导体柱面组成的电容器内电场和单位长度的电容，并对结果作了进一步讨论。
The electric field and capacitance of a confocal elliptic capacitor are calculated by the inverse hyperbolic cosine analytic function, and discussion on them is performed.
接地电位单元包括在介质衬底的前表面和后表面上以楔形形状形成的并且相互电容性地 耦合的导体对（13，14）。
The ground potential unit includes a pair of conductors (13/14) formed in a tapered shape on the front and the rear surface of the dielectric substrate and mutually capacity-coupled.
用电轴法讨论了偏心电容器内的电场分布，概括了平行园柱形带电导体间电场分布的一般情况。
The distribution of electric field in eccentric cylinder capacitors is discussed according to the electric axis law.
如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低成本。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
第一电容器，形成于所述半导体衬底上方并且具有包括第一下部电极、第一电容器介电层和第一上部电极的层压结构；
The first and second capacitors each have a multi-layer laminated structure which includes a lower electrode, a capacitor dielectric layer and an upper electrode.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本发明属于半导体器件技术领域，具体为一种高密度电荷存储的新型铁电电容器及其制作方法。
The invention belongs to the technical field of semiconductor devices, in particular to a novel ferroelectric condenser for storing high density charge and method for preparation.
本发明属于半导体器件技术领域，具体为一种高密度电荷存储的新型铁电电容器及其制作方法。
The invention belongs to the technical field of semiconductor devices, in particular to a novel ferroelectric condenser for storing high density charge and method for preparation.
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