本发明还 涉及一种对非易失性存储器器件中的数据进行保护的方法。
The invention further relates to method of protecting data in a non-volatile memory device.
本发明提供一种具有多层隧道绝缘体的存储器单元晶体管及存储器器件。
The invention provides a memory cell transistor having multi-layer tunnel insulator and memory device.
量子比特和存储器之间通过为我们称为共振器件的设备连接，振荡电路使量子比特的值能够保存一段短的时间。
The links between the qubits and the memory contain devices known as resonators, zigzagging circuits inside which a qubit's value can live on for a short time.
光分组交换由于缺乏高速光逻辑器件、光缓冲存储器等，因此还处于研究阶段。
OPS still is placed in to study the stage because of lacking of the high-speed optical logic device and optical buffer.
非易失性可变电阻器，存储器件，及其定标法。
Non-volatile variohm, memory element, and its scaling method.
本文针对实际维护PCB板中对含存储器模块的电路系统的测试需求，从测试角度对ROM和RAM建立一种复杂器件模型。
This paper aimed at testing requirement of digital circuits contain memory chips during maintaining PCB, proposes a complex component model of ROM and RAM from testing angle.
系统以ARM微处理器和FIFO存储器为核心，利用可编程逻辑器件实现对整个底层数据采集系统的逻辑控制，并给出了时序控制部分的仿真波形。
The system controls the logic of the data acquisition board by programmable logic device (PLD) with the center of the ARM microcontroller and FIFO memory and provides the simulate waveforms.
本文将介绍利用ALTERA公司的FLEX10 K器件，在数据存储器系统中实现数据存储控制接口的方法。
This paper will introduce the method of implementing the interface of data storage controller in the data storage system by using of the FLEX10K devices manufactured by ALTERA Corporation.
金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性，因此近年来在非易失存储器研究领域备受关注。
In recent years, in the field of non-volatile memory research, metal nanocrystal memory with low-power, high-speed read and write characteristics and high reliability receives much attention.
电子器件质量评定协调体系。熔接可编程只读存储器。空白详细规范。
Harmonized system of quality assessment for electronic components. Fusible link programmable read only memories. Blank detail specification.
向存储器单元中加载可编程逻辑器件配置数据，来对可编程核心 逻辑进行配置以执行定制逻辑功能。
Programmable logic device configuration data is loaded into the memory elements to configure the programmable core logic to perform a custom logic function.
此系统主要由单片机，USB主机控制器，高速RAM,FLASH存储器等器件组成，使得数码摄像头在嵌入式领域应用成为现实。
This system, which facilitates the utility of PC cameras in embedded application, is composed of MCU, USB Host Controller, high-speed RAM and FLASH memory.
本发明提供了电源电平升高的可编程逻辑器件存储器单元。
Programmable logic device memory elements with elevated power supply levels are provided.
该结构可利用现有存储器件在不增加时钟频率的情况下，提高存储器系统的容量和速度，同时降低成本。
The capacity and speed of the memory subsystem in this architecture can be improved using the existed memory devices while the cost can be downgraded without enhancement of the clock frequency.
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
同时，与普通电阻式随机存储器的存储单元相比，进一步简化了器件结构，并能提高器件的热稳定性。
At the same time, compared with the storage unit of an ordinary resistance type random memory, the invention further simplifies the device structure, and can improve the thermal stability of devices.
对微控制器而言，PDIUSBD12看起来就像一个带8位数据总线和一个地址位（占用两个位置）的存储器件。
To a micro-controller, the PDIUSBD12 appears as a memory device 8-bit data bus and 1 address bit (occupying 2 locations).
一种由多个具有在自身的加热体(26)上方延伸的硫属化物存储区(28)的相变存储器件形成的相变存储器。
A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region (28) extending over an own heater (26).
SDRAM作为雷达光栅显示视频帧缓冲存储器，通过FPGA器件实现对SDRAM的控制，已成功应用于一款雷达光栅显示终端。
This article introduces that in a new design of radar raster-displaying terminal, SDRAM is used as video frame memory and FPGA is adopted to carry out the process of control circuit.
实验观察到质子也可以导致存储器出现单个位的硬错误和器件功能错误，并对单个位的硬错误与器件集成度的关系提出了合理的解释。
Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.
铁电材料的疲劳特性是影响依赖可反转极化工作的电子器件性能的关键，例如非易失性铁电存储器。
Ferroelectric fatigue is much fatal for the electric apparatus based on the switchable polarization, such as non-volatile random access memories (NVFRAM).
为了暂时的存储数据的指令，CPU有一个特殊的存储器件称作寄存器。
To temporarily store data and instruction, the CPU has special-purpose storage devices called registers.
针对目前多位非挥发存储器存在的编程功耗大、比特间串扰严重、编程窗口小等缺陷，本论文提出一种新型多位非挥发存储器件结构。
Due to the disadvantages of recent multi-bit memory, for example high programming power, cross talk between two bits, small programming window, et al, a novel multi-bit memory device is proposed.
存储器330可包括不同的存储器件，例如FLASH存储器和只读存储器，但是本发明的范围并不局限于此。
Memory 330 may include different memory components, such as a flash memory and a read only memory (ROM), although the scope of the present invention is not so limited.
存储器330可包括不同的存储器件，例如FLASH存储器和只读存储器，但是本发明的范围并不局限于此。
Memory 330 may include different memory components, such as a flash memory and a read only memory (ROM), although the scope of the present invention is not so limited.
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