基于相场方法对包含多晶粒的纯物质凝固过程进行了数值模拟。
Numerical simulation based on phase field method is developed to describe polycrystalline solidification for pure material.
在金刚石的(100)，(110)和(111)面上分别获得了单晶金刚石膜和金刚石多晶粒子。
Epitaxial diamond films and polycrystalline diamond grain were obtained on (100), (110) and (111) surface of synthesized single-crystal diamond substrates.
就所包含晶粒数相同的多晶集合体来说，在确定晶粒随机取向时，选取不同的方法对它的各向异性程度也有一定的影响。
Even for the same number of grains when taking the different methods to determine the random orientation, the degree of anisotropy of simulated is different.
多晶材料裂纹穿过晶粒扩展而断裂。
Transgranular fracture. Fracture of polycrystalline materials by crack propagation through the grains.
三维个体晶粒棱长是描述晶粒尺寸的重要参量，多晶体中晶粒及其邻接晶粒的棱长之间的关系至今仍是空白。
However, there is not any report on the relationship between grain edge length and its neighboring ensemble grains edge length average in the polycrystal.
在其它参数保持不变的情况下，得出细晶粒多晶体金属的平均疲劳寿命随晶粒尺寸和应力振幅的增加而减小的结论。
The fatigue life is seen to depend on the grain size and stress amplitude, based on the nonequilibrium statistical theory of fatigue fracture and the model of interface energy.
另外，随着热丝与衬底间距的增大，沉积出的多晶硅薄膜样品的晶化率明显减小，薄膜的晶粒尺寸也相应减小。
In addition, with the increasing distance between the filament and the substrate, the crystalline volume fraction and the grain size of poly-Si films notablely decrease.
实验结果表明：多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。
A method for determining the number of grain and the average length of grain in polysilicon resistor is given.
假定高温合金材料是单晶材料的集合体，通过数值模拟的方法，利用多晶与单晶之间的关系，可以由宏观材料参数估计微观单晶晶粒的材料属性。
Based on the aggregate relationship between of polycrystals and single crystals, orthotropic property of microscopic single crystals could be defined from macroscopic material by numerical simulation.
SACP分析技术是分析多晶材料中晶粒位向的一种有效方法。
The SACP technique is an effective method for analysing the orientation of individual grain in polycrystalline materials.
三维个体晶粒棱长是描述晶粒尺寸的重要参量，多晶体中晶粒及其邻接晶粒的棱长之间的关系至今仍是空白。
The total edge length of three-dimensional individual grains is one of the grain characterization parameters to the grain size description.
多晶生长暂停拉伸时，新晶粒将在柱状晶顶部晶界夹角处形核并长大，而且新晶粒的晶格取向与原有晶粒的取向无关。
When pulling halts, the combination of grains occurs, and the lattice orientation of new grain is not related to the original grains.
提出了一种表面修饰的金属诱导晶化方法，以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
所以，在多晶材料的研究和生产过程中，都十分重视对晶粒度或组织大小的控制和评定。
So on the research and manufacture process of the polycrystalline materials, it is attached importance to the control and the assess of the size of the grain size or the structure.
多晶体材料中晶粒尺寸的增大，对大多数材料来说，晶粒长大只在升高温度加热的时候发生。
The increase in average grain size of a polycrystalline material; for most materials, an elevated-temperature heat treatment is necessary.
在多晶体材料中晶粒平均尺寸的增加，对大多数材料来说，这需要在一定温度下进行热处理。
The increase in average grain size of a polycrystalline material, for most materials, an elevated-temperature heat treatment is necessary.
高温下始终保持多晶体微晶粒结构。
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
因此，可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be considered to be simi…
TEM分析表明：复合镀层的基体为多晶镍，并且复合镀层晶粒细小，组织结构均匀、致密。
The TEM analysis shows that the matrix of composite coating is polycrystal nickel with the finer grain size, and the organization structure is homogeneous and compact.
因此，可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be considered to be similar to...
因此，可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be considered tob...
因此，可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be con...
因此，可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be con...
应用推荐