钝化层在半导体外延薄膜的上方和第二金属基座的上方具有窗口。
The passivating layer has windows at the top of the semi-conductor extension thin film and the second metal base.
用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
单晶，衬底，光电子，薄膜，外延。
Single Crystal, Substrate, Optico-Electronics, Film, Epitaxy.
本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。
Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.
标签薄膜溶胶-凝胶工艺外延生长电性能。
BST thin films sol gel technique epitaxial growth electrical properties.
通过改变外延生长工艺来调节两层薄膜的折射率，可在一定波导的厚度范围内实现单模传输。
By adjusting the difference of refractive index of the double layer film, single mode operation can be realized with a certain waveguide thickness.
而在大面积低质量衬底上实现效率高达14.7%。这一成果表明了薄膜外延太阳能电池工业化生产的潜力。
And efficiencies of up to 14.7% were achieved on large-area low-quality substrates, showing the potential of thin-film epitaxial solar cells for industrial manufacturing.
本文对薄膜沉积的形核、生长过程，对同质外延、异质外延生长过程中的某些现象进行了研究。
Some of the processes involved in thin film nucleation and growth are discussed. Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
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