由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场，使得器件特性严重退化。
A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge, which degrades the device characteristics seriously.
由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场，使得器件特性严重退化。
A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge, which degrades the device characteristics seriously.
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