在最佳工作条件下，给出了集电极电流和集电极——发射极电压波形。
The waveforms of the collector current and collector-emitter voltage are also determined under the optimum operation condition.
选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低于0.5V。
When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.
当iload超过最大允许值时发生过载情况，R6上的电压增大导致基极-发射极电压足够大到导通Q2。
In the event of an overload when ILOAD exceeds its maximum permissible value, the increase in voltage across R6 results in sufficient base-emitter voltage to turn on Q2.
第五步：调末级功率管的静态电流，该电流值可以经由过程测功率管的发射极电阻的电压换算而得到。
Step five: tune the final stage power transistor quiescent current, the current value of the power tube by measuring the voltage of the emitter resistance Converter and get.
图2 - 1 (a)给出了共发射极取向的晶体管的物理特性，同时也给出了硅器件的电压极性和大小。
Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.
由于Q2的基极-发射极的电压为0V而截止，因此没有负载电流流过r6。
Consequently, no load current flows through R6 because Q2, whose base-emitter voltage is now 0v, has turned off.
晶体开关管的集电极与发射极间的电压取决于电网电压。
The collector voltage of the switching transistor is determined by the voltage of the power network.
特点：基极-发射极间内置电阻，高电压。
特点：基极-发射极间内置电阻，高电压。
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