结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；
The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage;
当磁矩反平行排列时，自旋对电子输运性质的影响消失，但电子整体的透射概率明显减小。
When the magnetic moments are antiparallel, the spin affect on the electron is vanished, and the conductance decrease obviously.
当磁矩反平行排列时，自旋对电子输运性质的影响消失，但电子整体的透射概率明显减小。
When the magnetic moments are antiparallel, the spin affect on the electron is vanished, and the conductance decrease obviously.
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