利用MOCVD研制了无铝双量子阱列阵半导体激光器。
The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD.
利用耦合多量子阱载流子动力学模型，模拟了非对称双量子阱中载流子耦合的温度依赖性。
The temperature dependence of the carrier coupling in an asymmetric double-quantum-well was simulated by using the coupling multiple-quantum-well model of carrier dynamics.
非对称双量子阱中载流子动力学过程的温度依赖性研究，对于实现室温下高效的量子阱光电器件有着非常重要的意义。
The understanding of the temperature dependence of carrier dynamics in an asymmetric double-quantum-well is essentially important for the realization of room temperature efficient photonic devices.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
计算了斜磁场作用下量子双阱的能谱，给出了其最近邻能级间距分布和谱刚度。
The energy spectra in the double well subjected to a tilted magnetic field is calculated. The distribution of energy level spacing and the spectra rigidity are given.
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
On the basis of the study of the single circular groove guide and symmetric double circular groove guide, a new structure, asymmetric double circular groove guide, has been put forward.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
On the basis of the study of the single circular groove guide and symmetric double circular groove guide, a new structure, asymmetric double circular groove guide, has been put forward.
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