介绍一双极型芯片的热模拟系统。
This paper presents a heat distribution simulator for bipolar IC chips.
双极型移位寄存器可分为单向和双向两种。
Bipolar shift registers are classified as unidirectional and bidirectional.
双极型移位寄存器可分为单向和双向两种。
Biolar shift registers are classified as unidirectional and bidirectional.
本文研究了双极型电路传输延时的约束机理。
A study of limitation mechanisms to propagation delay of bipolar circuits has been carried out.
六十年代集成电路市场主要为双极型晶体管。
In the 1960s the IC market was broadly on bipolar transistors.
本发明涉及用在欠缺电解液双极型电池组中的密封垫。
The present invention relates to a gasket for use in a starved electrolyte bipolar battery.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
垂直双极型晶体管(118)比CMOS晶体管(116)高。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
本文论述双极型功率开关电路和CMOS音频功率放大器电路设计。
The paper focuses on circuit design of power switch with bipolar technology and audio amplifier with CMOS techn.
该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
本发明还涉及欠缺电 解液的双极型电池组和制造欠缺电解液双极型电池组的方法。
The present invention also relates to a starved electrolyte bipolar battery and a method for manufacturing a starved electrolyte bipolar battery.
本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。
The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing.
制造成本比现有双极型极板铅酸电池下降30% - 50%，接近普通铅酸电池水平。
The manufacture cost which approaches normal lead-acid battery level, is reduced by 30%-50% compared with the existing dual-pole polar plate lead-acid battery.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
研究人员通过使用热电阻和热电容对集成电路中异质连接双极型晶体管的热效应进行建模分析。
The researchers modelled the thermal effects of a heterojunction bipolar transistor in an integrated circuit using thermal resistors and thermal capacitors.
大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。
Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
一种适用于ask接收器中的双极型对数中频放大器，具有接收信号强度指示的功能(RSSI)。
A bipolar logarithmic intermediate-frequency (if) amplifier with received signal strength indicator (RSSI) circuit for ASK Receiver is presented.
框架设计成至少部分地包围在双极型电池组中安装的双片，并包含允许气体传输通过密封垫的装置。
The frame is designed to at least partially encompass a biplate when mounted in a bipolar battery, and include means to permit gas passage through the gasket.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
分析了LDO中过温保护电路的设计，主要介绍了LDO中双极型过温保护电路和CMOS过温保护电路。
This paper analyses the design of thermal protect for LDO, then gives a bipolar thermal protect circuit for LDO and a CMOS thermal protect circuit for LDO.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
它为多总线主设备系统以及远程方式下的8089IOP提供总线仲裁，它还具有双极型的缓冲与驱动能力。
The 8289 provides system bus arbitration for systems with multiple bus masters, Such a, an 8086 CPU with 8089 IOP in its REMOTE mode, while providing bipolar buffering and drive capability.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
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