六十年代集成电路市场主要为双极型晶体管。
In the 1960s the IC market was broadly on bipolar transistors.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
垂直双极型晶体管(118)比CMOS晶体管(116)高。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。
The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing.
研究人员通过使用热电阻和热电容对集成电路中异质连接双极型晶体管的热效应进行建模分析。
The researchers modelled the thermal effects of a heterojunction bipolar transistor in an integrated circuit using thermal resistors and thermal capacitors.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
MOSFET的晶体管一直很受欢迎，在此应用程序，因为它fullfils双方的要求，更好的话，双极型晶体管。
The Mosfet transistor has been very popular in this application as it fullfils both requirements better then the bipolar transistor.
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
本文提出一种新的用于CMOS图像传感器像素的光电检测器——双极结型光栅晶体管。
A new photodetector, the bipolar junction photogate transistor, was proposed for CMOS image sensor.
本文将普通的双极型IC工艺用干磁敏器件的制作中，成功地研制了一种新型三维磁敏晶体管，并在理论和实验上分析讨论了其灵敏度、线性度和失调等问题。
Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
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