分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
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