研究金刚石砂轮磨削单晶硅片时的表面磨削温度。
The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.
我司生产的单晶硅片品质佳、表面无玷污、无凹坑和异常斑点，转化率高。
Our production quality is good, the surface of mono-crystalline silicon is defiled, and without the pits and abnormal spot, high conversion.
选择可溶性铕盐溶液为原料，利用三电极电化学池在单晶硅片上进行薄膜沉积。
Select a soluble europium salt solution as the raw material, and deposit the thin film on the single crystal silicon wafer by utilizing a three-electrode electrochemical cell.
主要从事太阳能单晶硅棒、单晶硅片、太阳能电池组件的设计、生产、销售和服务。
We are mainly engaged in the designing, producing, sales and providing services of Solar Silicon ingots, Wafer, Solar cell and Solar module.
本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。
In experiment, a series of silicon nitride thin films are prepared on cleaned silicon wafer by varying deposition parameters.
本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。
In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.
良品率高、损耗少、氧、碳含量均在允许范围内，为下一步单晶硅片的生产提供了高度的质量保障。
High yield, less waste, oxygen, carbon content are allowed in, for the next step of mono-crystalline silicon for the production of a high degree of quality guarantee.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
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