本论文的工作是通过第一性原理计算，结合分子轨道理论和半导体理论等对金刚石和氮化锌半导体电子材料的相关性质进行探索和研究。
The dissertation is devoted to the properties study of diamond and zinc nitride semiconductor materials from first-principles, molecular orbital theory and semiconductor theory.
本课程全面介绍了半导体物理及半导体器件的理论基础。
This course deals with the theory base of semiconductor physics and semiconductor device in detail.
纳米结构半导体具有重要的理论研究价值和潜在的应用前景。
Nanostructured semiconductor is important for both theoretical research and future application.
理论研究导出了用微分功率输出监控半导体激光器端面减反射膜制备的主动监控法的两条原则。
Two principles have been proposed for the active monitoring method, adopted to the AR Coating semiconductor lasers and based on detecting the derivatives of the outputs from the facets to be coated.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。
Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
同时，利用相位渗透理论，数值计算了垂直腔半导体光放大器（VCSOA）中的有效腔长。
The efficient cavity length of vertical cavity semiconductor optical amplifier (VCSOA) is calculated with the theory of phase penetrating.
然后基于半导体的速率方程理论，建立了载流子浓度随时间变化的数学模型。
Secondly, mathematical model of time-resolved carrier density has been established on the base of semiconductor rate equation theory.
分别比较了不同的半导体电子器件的材料、理论和所采用的制备技术。
And the materials, theories and manufacture techniques adopted by different semiconductor electron device are compared.
从速率方程和多层介质膜理论出发，构建了垂直腔半导体光放大器(VCSOA)的动态传输矩阵模型。
Starting from the rate equations and the theory of multilayer dielectric film, a dynamic transfer matrix model of vertical cavity semiconductor optical amplifiers (VCSOAs) was established.
应用有限时间热力学理论分析了半导体温差发电器的工作性能。
The performance of a semiconductor thermoelectric generator is analyzed by using the theory of finite-time thermodynamics.
理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。
The theory research shows that the laterally tapered structure can improve the polarization sensitivity of semiconductor laser amplifier.
将微电子测试结构与质量管理理论结合起来，运用于半导体技术，取得了初步结果。
And initial results have been obtained in the field of the application of combining microelectronic test structure with quality control theory to semiconductor technology.
建立了基于半导体光放大器交叉增益饱和的波长转换的理论模型。
A theoretical model of wavelength conversion based on cross gain saturation in a semiconductor optical amplifier (SOA) has been established.
本文所得的结果对多级半导体制冷的优化设计具有一定的理论意义。
The conclusions obtained in this paper can provide some theoretical meanings for the optimal design of multi-stage semiconductor cooler.
基于法布里珀罗(F P)腔光束干涉理论，建立垂直腔半导体光放大器(VCSOA)的双稳模型。
Based on the beam interferential theory of Fabry-Perot semiconductor laser, a bistable model of vertical cavity semiconductor optical amplifier (VCSOA) was established.
本文对双稳态半导体激光器的滞后回线进行了理论分析。
A theoretical analysis of hysteresis is presented on bistable semiconductor lasers.
基于半导体可饱和吸收镜（SESAM）的负克尔效应，对含SESAM的五镜腔进行了理论计算和分析。
The five-mirror laser cavity containing a semiconductor saturable absorber mirror (SESAM) with negative Kerr effect is theoretically analyzed for the first time.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
基于热电制冷原理和PID参数自整定理论，本论文设计了一种半导体激光器环境的温度控制仪。
Based on the thermoelectric refrigeration principle and PID parameter self-tuning control technique, a temperature controller for semiconductor laser's environment test is designed.
本文提出了一个窄带半导体双光子光学双稳性的稳态理论模型。
The steady state model of two-photon optical bistability in narrow-gap semiconductors are presented.
本文用半经典理论研究了负频反馈（NFFB）半导体激光器的FM和AM噪声。在适当的条件下，FM噪声（线宽）可用NFFB技术得到极大的抑制。
The FM noise and AM noise of a negative frequency feedback (NFFB) semiconductor laser(LD)are presented. The FM noise (linewidth)can be reduced greatly by NFFB technique under proper conditions.
对宽带调谐外腔半导体激光器进行了理论及实验研究，分析了其最大调谐范围和连续调谐条件，为宽带可调谐激光器的设计提供了依据。
The wide band wavelength tuning external cavity semiconductor laser was theoretically and experimentally analyzed. The maximum tuning range and the continuous tuning condition were given.
本文用半经典理论研究了负频反馈（NFFB）半导体激光器的FM和AM噪声。
The FM noise and AM noise of a negative frequency feedback (NFFB) semiconductor laser(LD)are presented.
这些结构的获得对我们全面探讨半导体硅团簇的物性有了理论基础。
The structures provide us with theoretical basis of investigating the properties of semiconductor clusters.
基于该仪器，论文从光学衍射理论出发，结合半导体技术、微机接口技术等，阐述了它的基本原理、结构组成及应用。
This paper puts emphasis on formulating the basic principle, structure and application of the measuring instrument by coupling of the theory of diffraction, sensor technology and interface technology.
本文是半导体中光的相干传播理论的第一部分。
This paper is the first part of a theory of the coherent propagation of light in semiconductors.
在详细阐述碳纳米管传感器工作机理的基础上，用半导体杂质理论和离子对吸附模型对这一最新实验结果作出理论解释。
The Theory of Semiconductor Impurities along with an ion-pair model is used to explain this new experiment phenomenon, based on detailed discussion of the mechanism of SWNT sensors.
本文以层状的CTRW模型为基础，对非晶半导体超晶格中的瞬态光电导作了理论计算。
On basis of a layered CTRW model the transient photoconductivity in amorphous semi-conductor superlattices is calculated.
本文以层状的CTRW模型为基础，对非晶半导体超晶格中的瞬态光电导作了理论计算。
On basis of a layered CTRW model the transient photoconductivity in amorphous semi-conductor superlattices is calculated.
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