本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
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