双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
近年来，由于半导体功率器件工艺的进步和成本的降低，微波固态发射机越来越多地为各类微波系统所采用。
Recently, duce to the improvements of semiconductor power device technology's and dropping of costs, more and more solid state transmitters have been adopted by various microwave systems.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
Peak已经开发了半导体专利技术，使单一集成电路带宽扩音器代替高功率多路器组合扩音器成为可能。
Peak has developed proprietary semiconductor technology in which a single-ide bandwidth amplifier may replace multiple high-power multiplexer-combined-amplifiers.
半导体激光器的自动功率控制(APC)是光纤通信实用化过程中提出来的重要课题之一。
The APC (Automatic Power Control) of semiconductor lasers is an important issue in the practical fiber communication.
该文介绍电力电子技术研究的问题、功率半导体器件、主要应用和新应用。
This paper introduces the research problems, power semiconductors, main and new applications on power electronics.
理论研究导出了用微分功率输出监控半导体激光器端面减反射膜制备的主动监控法的两条原则。
Two principles have been proposed for the active monitoring method, adopted to the AR Coating semiconductor lasers and based on detecting the derivatives of the outputs from the facets to be coated.
利用这种焊料研制出脉冲功率达100w的半导体激光器列阵。
A semiconductor laser array with pulse power of 100w was made by utilizing the solder.
半导体器件没有灯丝，因此也不需加热功率或加热时间。
Semiconductor devices have no filament or heaters and therefore require no heating power or warm-up time.
斯潘可控硅功率控制器集成了最新的半导体，冷却方式，固态发射电路。
Spang SCR power controllers incorporate the latest in semiconductors, cooling methods and solid-state firing circuitry.
这种半导体雷射可产生频率范围很广的高功率雷射。
Such a semiconductor laser can produce high power across a wide frequency.
就SDL7432功率型半导体激光器的线性测量进行了讨论。
The linear measurement of SDL7432 power semiconductor laser has been discussed in this paper.
欧姆接触的好坏，对高功率半导体激光器至关重要。
Ohmic contact is a critical factor for high power semiconductor lasers.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
在考虑了俄歇效应的情况下，用行波速率方程组研究了半导体激光器的输出功率与端面反射率的关系。
Taking into account the Auger effect, the output-enhancement coatings applied to the facets of the semiconductor lasers have been investigated using a set of travelling wave rate equations.
结论低功率半导体激光对急慢性关节损伤，尤其是急性小关节损伤有很好的疗效。
Conclusions There are good results in treatment of acute and chronic joint by low intensity semiconductor laser, especially for small joint.
结论低功率的半导体激光可促进脊髓运动神经细胞功能，加速轴突再生。
Conclusion Low intensity semiconductor laser could promote the function of the spine motor nerve cells and accelerate the axonal regeneration.
目的探讨低功率半导体激光对急慢性关节损伤的治疗作用。
Objective to determine the clinical effect on patients with joint injury treated by low intensity semiconductor laser.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
目的探讨低功率半导体激光对家兔神经功能恢复的影响。
Objective The effect on neural functional recovery of rabbits irradiated by low intensity semiconductor laser were studied.
然后通过调节外加的几何光学透镜，在长达100米的红外远距离大功率半导体激光器照明系统中将得到利用。
It will be used in the illumination system of high power semiconductor laser over a long infrared distance of 100 meters through adjusting an additional geometric optical lens.
在高功率微波作用下，半导体器件的失效问题一直困扰着人们。
The failure of semiconductor due to high power microwave has been puzzling people for a long time.
本文论述了大功率列阵半导体激光器组侧泵浦YAG激光器的工作原理，在此基础上进行设计、制作并对激光器进行调试和性能参数测量。
The theory of side pumping Nd:YAG laser by high-power array-semiconductor laser cluster are discussed, on the basis of this theory, we design, make and justify the laser, and measure its data.
本文论述了大功率列阵半导体激光器组侧泵浦YAG激光器的工作原理，在此基础上进行设计、制作并对激光器进行调试和性能参数测量。
The theory of side pumping Nd:YAG laser by high-power array-semiconductor laser cluster are discussed, on the basis of this theory, we design, make and justify the laser, and measure its data.
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