抛光垫修整是化学机械抛光的重要过程之一。
Polishing pad conditioning is very important for chemical mechanical polishing to improve the performances of a pad.
抛光垫是化学机械抛光(CMP)系统的重要组成部分。
Polishing pad is a very important component of the chemical-mechanical polishing (CMP) system.
着重分析了铜化学机械抛光的抛光过程和相关的影响因素；
The polishing processes of copper CMP and its influence factors were introduced.
实验表明，脉冲电化学机械抛光是一种有效的镜面加工方法。
The experiments of polishing show that it is an effective mirror processes.
本发明进一步提供一种使用上述各化学机械抛光组合物抛光基材的方法。
The invention further provides methods of polishing a substrate using each of the above-described chemical-mechanical polishing compositions.
结果表明经过化学机械抛光随后再经腐蚀后的蓝宝石衬底的表面性能最好。
The results show that the surface properties of it with CMP, and then chemically etching are best.
本发明进一步提供一种利用上述抛光组合物对基板进行化学机械抛光的方法。
The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
从磷酸盐激光玻璃的成分和结构出发，分析了其化学机械抛光(CMP)机制。
Embarked from the component and structure of phosphate laser glass, its chemical-mechanical polishing (CMP) mechanism is analyzed.
单步循环过滤，用来去除胶体硅基化学机械抛光(CMP)磨料中尺寸过大的微粒。
Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.
一种化学机械抛光垫，包含由(A)苯乙烯聚合物和(B)二烯聚合物构成的非水溶性基质。
A chemical mechanical polishing pad comprising a water-insoluble matrix which comprises (a) a styrene polymer and (b) a diene polymer.
本发明公开了一种化学机械抛光液，其含有溶胶型二氧化硅、速率增助剂、表面活性剂和水。
The invention discloses chemi-mechanical polishing liquid, which comprises a sol type silicon dioxide, a velocity accelerating auxiliary agent, a surfactant and water.
一种复合式化学机械抛光法，是先在第一抛光机台中，以第一抛光盘 对待平坦层进行初步的抛光。
The invention is a combined chemical-mechanical polishing method, firstly primarily polishing a to-be-flattened layer by first polishing disc in the first polisher platform;
目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
化学机械抛光(CMP)在半导体工业内获得了广泛的赞同，对控制形貌起伏的硅片表面当作首选方法。
Chemical mechanical planarization (CMP) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography.
对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。
The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.
半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。
Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
介绍了在化学机械抛光过程中，可以通过抛光头与抛光台运动速度关系优化配置，降低晶片表面不均匀度，从而更好地实现晶片局部和全局平坦化。
This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
介绍了在化学机械抛光过程中，可以通过抛光头与抛光台运动速度关系优化配置，降低晶片表面不均匀度，从而更好地实现晶片局部和全局平坦化。
This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
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