增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。

The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.

youdao

增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。

The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.

youdao