晶体管（光敏晶体管除外）耗散功率少。于1瓦。 千。
Transistors (excluding photosensitive transistors) with a dissipation rate of less than 1 watt …
本发明的薄膜晶体管具有光敏退化性小、迁移率高，响应速度快、柔性可弯曲、性能稳定性好的优点。
The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.
本发明的薄膜晶体管具有光敏退化性小、迁移率高，响应速度快、柔性可弯曲、性能稳定性好的优点。
The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.
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