第一种方法是测量二极管在各偏压点下的输入阻抗与管壳阻抗。
The first method is based on the measurements of the input impedance at various bias voltages and the cartridge impedance of the diode.
干涉仪的两个臂长相差波导波长的四分之一，使器件在最佳线性点工作，无需外加电偏压。
Two arms of the interferometer are different in length by one -quarter of a guide wavelength, allowing the device to operate at its optimal linearity point without external electrical bias.
偏压，在控制电路的两点之间的电位差。
BIAS, The potential difference applied between two points for controlling a circuit.
实验结果表明：量子点的横向耦合控制了量子点器件在小偏压下的电输运特性。
Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.
随着外加脉冲偏压的增大、脉冲时间的增加，加工得到的点状纳米结构的高度和半径会随之增加。
It is concluded that the height and the radius of nanostructures increase with the raising of the applied voltage and the pulse time.
接着，我们研究了微波场下自旋偏压驱动的量子点模型。
Next, the transport properties of quantum dots driven by spin bias in microwave field are studied.
接着，我们研究了微波场下自旋偏压驱动的量子点模型。
Next, the transport properties of quantum dots driven by spin bias in microwave field are studied.
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