而不同的石墨烯面之间存在的表面能可以通过在晶界处形成空位或者位错环而得到降低。
The interface energy that exists between the sheets could be minimized by the grain boundaries by the formation of dislocations or pairs of rings.
再结晶晶粒的生长速度与再结晶驱动力成正比，再结晶驱动力取决于晶界能和位错密度。
The growth velocity for recrystallized grain is proportional to the driving force of recrystallization, which is determined by the grain boundary energy and dislocation density.
那两位作家恰恰能告诉他为何他的做法大错特错。
Those authors would show him precisely why that's a big mistake.
然后利用相同的计算模型，分别计算了硅的滑移面和拖动面上的各种位错的形成能。
Second, with the same model, we calculated the forming energies of different dislocations in the glide and shuffle planes in Si.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
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